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Publication list (*Corresponding author)

 

  1. J. Lee and J. Kang*, Metal-free N2-to-NH3 thermal conversion at the boron-terminated edges of hexagonal boron nitride: Mechanism and kinetics. J. Catal. 375, 68 (2019).
  2. H. Kim, J. Bang, and J. Kang*, Robust ferromagnetism in hydrogenated graphene mediated by spin-polarized pseudospin. Sci. Rep. 8, 13940 (2018).
  3. H. Lee and J. Kang*, A unified understanding of the direct coordination of NO to first-transition-row metal centers in metal-ligand complexes. Phys. Chem. Chem. Phys. 19, 28098 (2017).
  4. Y.C. Jeong, S. Y. Song, H. W. Kim, H.-J. Shin, J. Kang*, and J. Seo, Probing Franck-Condon-Like excitations in anchoring of phthalocyanine molecules on Au (111). J. Phys. Chem. C 121, 17402 (2017).
  5. J. Kang*, J.-S. Park, P. Stradins, and S.-H. Wei, Nonisovalent Si-III-V and Si-II-VI alloys: Covalent, ionic, and mixed phases. Phys. Rev. B 96, 045203 (2017).
  6. S. Y. Song, Y. C. Jeong, Y. Kim, J. Kang*, and J. Seo, Local modification of intermolecular interactions at a sub-molecule level. Nanotechnology 27, 415711 (2016).
  7. J. Kang*, L. Zhang, and S.-H. Wei, A unified understanding of the thickness-dependent bandgap transition in hexagonal two-dimensional semiconductors. J. Phys. Chem. Lett. 7, 597-602 (2016).
  8. J.-S. Park, J. Kang, J.-H. Yang, W. E. McMahon, and S.-H. Wei, Polymerization of defect states at dislocation cores in InAs. J. Appl. Phys. 119, 045706 (2016).
  9. H. Tak, H. Lee, J. Kang, and J. Cho, A high-spin nickel(II) borohydride complex in dehalogenation. Inorg. Chem. Front. 3, 157-163 (2016).
  10. J.-S. Park, B. Huang, S.-H. Wei, J. Kang*, and W. E. McMahon, Period-doubling reconstructions of semiconductor partial dislocations. NPG Asia Mater. 7, e216 (2015).
  11. Y. C. Jeong, S. Y. Song, Y. Kim, Y. Oh, J. Kang*, and J. Seo, Tip-induced molecule anchoring in Ni–phthalocyanine on Au(111) substrate. J. Phys. Chem. C 119, 27721-27726 (2015).
  12. J. Kim, B. Shin, H. Kim, J. Lee, J. Kang, S. Yanagisawa, T. Ogura, H. Masuda, T. Ozawa, and J. Cho, Steric effect on the nucleophilic reactivity of nickel(III) peroxo complexes. Inorg. Chem. 54, 6176-6183 (2015).
  13. N. Huo, Z. Wei, X. Meng, J. Kang, F. Wu, S.-S. Li, S.-H. Wei, and J. Li, Interlayer coupling and optoelectronic properties of ultrathin two-dimensional heterostructures based on graphene, MoS2 and WS2. J. Mater. Chem. C 3, 5467 (2015).
  14. J.-H. Yang, J.-S. Park, J. Kang*, and S.-H. Wei, First-principles multiple-barrier diffusion theory: The case study of interstitial diffusion in CdTe. Phys. Rev. B 91, 075202 (2015).
  15. J.-S. Park, J. Kang, J.-H. Wei, W. Metzger, and S.-H. Wei, Stability and electronic structure of the low-Σ grain boundaries in CdTe: A density functional study. New. J. Phys. 17, 013027 (2015).
  16. S. G. Choi, J. Kang, J. Li, H. Haneef, N. J. Podraza, C. Beall, S.-H. Wei, S. T. Christensen, and I. L. Repins, Optical function spectra and bandgap energy of Cu2SnSe3. Appl. Phys. Lett. 106, 043902 (2015).
  17. J.-H. Yang, J.-S. Park, J. Kang, W. Metzger, T. Barnes, and S.-H. Wei, Tuning the Fermi level beyond the equilibrium doping limit through quenching: The case of CdTe. Phys. Rev. B 90, 245202 (2014).
  18. W.-J. Yin, J.-H. Yang, J. Kang, Y. Yan, and S.-H. Wei, Halide perovskite materials for solar cells: a theoretical review. J. Mater. Chem. A 3, 8926 (2014).
  19. J. Kim, W.-J. Yin, J. Kang, Y. Yan, S.-H. Wei, and M. M. Al-Jassim, Creating intermediate bands in ZnTe via co-alloying approach. Appl. Phys. Express 7, 121201 (2014).
  20. I. García, J. F. Geisz, R. M. France, J. Kang, S.-H. Wei, M. Ochoa, and D. J. Friedman, Metamorphic Ga0.76In0.24As/GaAs0.75Sb0.25 tunnel junctions grown on GaAs substrates. J. Appl. Phys. 116, 074508 (2014).
  21. R. M. France, W. E. McMahon, J. Kang, M. A. Steiner, and J. F. Geisz, In situ measurement of CuPt alloy ordering using strain anisotropy. J. Appl. Phys. 115, 053502 (2014).
  22. A. K. Starace, J. Kang, J. Zhu, J. C. Gomez, and G. C. Glatzmaier, One-pot shear synthesis of gallium, indium, and indium-bismuth nanofluids: an experimental and computational study. J. Nanotechnol. Eng. Med. 4, 041004 (2014).
  23. J. Kang* and S.-H. Wei, Tunable Anderson localization in hydrogenated graphene based on the electric field effect. Phys. Rev. Lett. 111, 216801 (2013).
  24. W. E. McMahon, J. Kang, R. M. France, A. G. Norman, D. J. Friedman, and S.-H. Wei, Ordering-enhanced dislocation glide in III-V alloys. J. Appl. Phys. 114, 203506 (2013).
  25. J. Kang*, G. C. Glatzmaier, and S.-H. Wei, Origin of the bismuth-induced decohesion of nickel and copper grain boundaries. Phys. Rev. Lett. 111, 055502 (2013).
  26. J. Kang*, Y.-H. Kim, G. C. Glatzmaier, and S.-H. Wei, Origin of anomalous strain effects on the molecular adsorption on boron-doped graphene, J. Chem. Phys. 139, 044709 (2013).
  27. A. T. Lee, J. Kang, S.-H. Wei, K. J. Chang, and Y.-H. Kim, Carrier-mediated long-range ferromagnetism in electron-doped Fe-C4 and Fe-N4 incorporated graphene. Phys. Rev. B 86, 165403 (2012).
  28. J. Kang*, J. Zhu, C. Curtis, D. Blake, G. Glatzmaier, Y.-H. Kim, and S.-H. Wei, Atomically abrupt liquid-oxide interface stabilized by self-regulated interfacial defects: The case of Al/Al2O3 interfaces. Phys. Rev. Lett. 108, 226105 (2012).
  29. J. Kang*, J. Zhu, S.-H. Wei, E. Schwegler, and Y.-H. Kim, Persistent medium-range order and anomalous liquid properties of Al1-xCux alloys. Phys. Rev. Lett. 108, 115901 (2012).
  30. J. Kang*, Y. S. Jung, S.-H. Wei, and A. C. Dillon, Implications of the formation of small polarons in Li2O2 for Li-air batteries. Phys. Rev. B 85, 035210 (2012).
  31. Y. Zhao, C. Ban, J. Kang, S. Santhanagopalan, G.-H. Kim, S.-H. Wei, and A. C. Dillon, P-type doping of lithium peroxide with carbon sheets. Appl. Phys. Lett. 101, 023903 (2012).
  32. J. H. Bak, V.-D. Le, J. Kang, S.-H. Wei, and Y.-H. Kim, First-principles study of electronic structure and hydrogen adsorption of 3d transition metal exposed paddle wheel frameworks. J. Phys. Chem. C 116, 7386 (2012).
  33. J. Kang*, S.-H. Wei, K. Zhu, and Y.-H. Kim, First-principles theory of electrochemical capacitance of nanostructured materials: Dipole-assisted subsurface intercalation of lithium in pseudocapacitive TiO2 anatase nanosheets. J. Phys. Chem. C 115, 4909 (2011).
  34. Y.-T. Zhai, S. Chen, J.-H. Yang, H.-J. Xiang, X.-G. Gong, A. Walsh, J. Kang, and S.-H. Wei, Structural diversity and electronic properties of Cu2SnX3 (X=S, Se): A first-principles investigation. Phys. Rev. B 84, 075213 (2011).
  35. J.-W. Park, H. Jang, S. Kim, S.-H. Choi, H. Lee, J. Kang, and S.-H. Wei, Microstructure, optical property, and electronic band structure of cuprous oxide thin films. J. Appl. Phys. 110, 103503 (2011).
  36. J. Kang*, S.-H. Wei, and Y.-H. Kim, Origin of the diverse melting behaviors of intermediate-size nanoclusters: Theoretical study of AlN (N = 51–58, 64). J. Am. Chem. Soc. 132, 18287 (2010).
  37. Y.-H. Kim, J. Kang, and S.-H. Wei, Origin of enhanced dihydrogen-metal interaction in carboxylate bridged Cu2-paddle-wheel frameworks. Phys. Rev. Lett. 105, 236105 (2010).
  38. J. Kang and Y.-H. Kim, Half-solidity of tetrahedral-like Al55 clusters. ACS Nano 4, 1092 (2010).
  39. J. Kang, S.-H. Wei, and Y.-H. Kim, Microscopic theory of hysteretic hydrogen adsorption in nanoporous materials. J. Am. Chem. Soc. 132, 1510 (2010).
  40. H. Xiang, J. Kang, S.-H. Wei, Y.-H. Kim, C. Curtis, and D. Blake, Shape control of Al nanoclusters by ligand size. J. Am. Chem. Soc. 131, 8522 (2009).
  41. Y.-H. Kim, Y. Y. Sun, W. I. Choi, J. Kang, and S. B. Zhang, Enhanced dihydrogen adsorption in symmetry-lowered metal–porphyrin-containing frameworks. Phys. Chem. Chem. Phys. 11, 11400 (2009).
  42. J. Kang, Y.-H. Kim, J. Bang, and K. J. Chang, Direct and defect-assisted electron tunneling through ultrathin SiO2 layers from first principles. Phys. Rev. B 77, 195321 (2008).
  43. J. Kang, J. Bang, B. Ryu, and K. J. Chang, Effect of atomic-scale defects on the low-energy electronic structure of graphene: Perturbation theory and local-density-functional calculations. Phys. Rev. B 77, 115453 (2008).
  44. Y.-J. Kang, J. Kang, and K. J. Chang, Electronic structure of graphene and doping effect on SiO2. Phys. Rev. B 78, 115404 (2008).
  45. J. Kang and K. J. Chang, The electronic structure of Ga vacancy in Mn-doped GaN. phys. stat. sol. (c) 5, 3035 (2008).
  46. W.-J. Lee, J. Kang, and K. J. Chang, P-type doping and compensation in ZnO. J. Korean Phys. Soc. 53, 196 (2008).
  47. J. Kang and K. J. Chang, The effect of Ga-vacancies on the defect and magnetic properties in Mn-doped GaN. J. Appl. Phys. 102, 083910 (2007).
  48. J. Bang, H. Kim, J. Kang, W.-J. Lee, and K. J. Chang, Retardation of boron diffusion in SiGe alloy. Physica B 401-402, 196 (2007).
  49. J. Bang, J. Kang, W.-J. Lee, K.J. Chang, and H. Kim, The chemical bonding effect of Ge atoms on B diffusion in Si. Phys. Rev. B 76, 064118 (2007).
  50. Y.-J. Kang, J. Kang, Y.-H. Kim, and K. J. Chang, First-principles approach to the electron transport and applications for devices based on carbon nanotubes and ultrathin oxides. Comp. Phys. Commun. 177, 30 (2007).
  51. J. Kang, D.-Y. Kim, and K. J. Chang, Reliability issues and role of defects in high-k dielectric HfO2 devices. J. Korean Phys. Soc. 50, 552 (2007).
  52. W.-J. Lee, J. Kang, and K. J. Chang, The origin of p-type conductivity in P-doped ZnO. J. Korean Phys. Soc. 50, 602 (2007).
  53. W.-J. Lee, J. Kang, and K. J. Chang, Defect properties and p-type doping efficiency in phosphorus-doped ZnO. Phys. Rev. B 73, 024117 (2006).
  54. D.-Y. Kim, J. Kang, and K. J. Chang, Physical origin of threshold voltage problems in polycrystalline silicon/HfO2 gate stacks. Appl. Phys. Lett. 88, 162107 (2006).
  55. W.-J. Lee, J. Kang, and K. J. Chang, Electronic structure of phosphorus dopants in ZnO. Physica B 376, 699 (2006).
  56. E. Choi, J. Kang, and K. J. Chang, Energetics of cubic and hexagonal phases in Mn-doped GaN. Phys. Rev. B 74, 245218 (2006).
  57. J. Kang and K. J. Chang, The electronic and magnetic properties of Mn-doped GaN. Physica B 376, 635 (2006).
  58. D.-Y. Kim, J. Kang, and K. J. Chang, Impact of Si impurities in HfO2: Threshold voltage problems in poly-Si/HfO2 gate stacks. J. Korean Phys. Soc. 48, 1628 (2006).
  59. H.-C. Jeon, T.-W. Kang, T.-W. Kim, J. Kang, and K. J. Chang, Enhancement of the magnetic properties in (Ga1-xMnx)N thin films due to Mn-delta doping. Appl. Phys. Lett. 87, 092501 (2005).
  60. J. Kang, K. J. Chang, and H. Katayama-Yoshida, First-principles study of ferromagnetism in Mn-doped GaN. J. Superconductivity 18, 55 (2005).
  61. H.-M. Hong, Y.-J. Kang, J. Kang, E.-C. Lee, Y.-H. Kim, and K. J. Chang, Effect of chemical bonding on the magnetic stability and magnetic moment in Mn-based binary compounds. Phys. Rev. B 72, 144408 (2005).
  62. J. Kang, E.-C. Lee, Y.-G. Jin, and K. J. Chang, H-related defect complexes in HfO2: A model for positive fixed charge defects. Appl. Phys. Lett. 84, 3894 (2004).
  63. J. Kang, E.-C. Lee, and K. J. Chang, First-principles study of the structural phase transformation of hafnia under pressure. Phys. Rev. B 68, 054106 (2003).